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dc.contributor.authorJian, Sheng-Ruien_US
dc.contributor.authorPhuoc Huu Leen_US
dc.contributor.authorLuo, Chih-Weien_US
dc.contributor.authorJenh-YihJuangen_US
dc.contributor.authorWu, Kaung-Hsiungen_US
dc.contributor.authorLee, Jyh-Weien_US
dc.date.accessioned2018-08-21T05:53:10Z-
dc.date.available2018-08-21T05:53:10Z-
dc.date.issued2017-11-01en_US
dc.identifier.issn1947-2935en_US
dc.identifier.urihttp://dx.doi.org/10.1166/sam.2017.3112en_US
dc.identifier.urihttp://hdl.handle.net/11536/144352-
dc.description.abstractPolycrystalline Bi3Se2Te thin films were grown on c-plane sapphire substrates by pulsed laser deposition (PLD) in helium atmosphere. Two different helium gas pressures of P-He = 2.7x10(-3) and 8.7x10(1) Pa were used during deposition. The microstructure, surface morphology, and nanomechanical properties of the obtained Bi3Se2Te films were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and nanoindentation, respectively. Results indicated that the films deposited under different P-He's all exhibited highly c-axis-oriented characteristics with granular morphology. Nevertheless, the surface roughness showed strong dependence on PHe, increased from 1.3 nm to 11.8 nm for films grown at lower and higher P-He, respectively, suggesting a prominent role played by the helium gas in the nucleation and growth behavior during deposition. The Weibull statistical analysis was adopted to calculate the characteristic values of hardness and Young's modulus of the Bi3Se2Te films. In addition, the values of the fracture toughness and the nanoindentation-induced fracture behaviors of Bi3Se2Te thin films were also investigated and the results indicated that films with smaller grain size and larger surface roughness give rise to larger fracture toughness.en_US
dc.language.isoen_USen_US
dc.subjectBi3Se2Te Thin Filmsen_US
dc.subjectNanoindentationen_US
dc.subjectFractureen_US
dc.titleNanomechanical Properties and Fracture Behaviors of Bi3Se2Te Thin Films by Nanoindentationen_US
dc.typeArticleen_US
dc.identifier.doi10.1166/sam.2017.3112en_US
dc.identifier.journalSCIENCE OF ADVANCED MATERIALSen_US
dc.citation.volume9en_US
dc.citation.spage1877en_US
dc.citation.epage1881en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000419754900001en_US
Appears in Collections:Articles