標題: Field-effect-dependent thermoelectric power in highly resistive Sb2Se3 single nanowire
作者: Sun, Kien Wen
Ko, Ting-Yu
Shellaiah, Muthaiah
應用化學系
電機學院
電子工程學系及電子研究所
Department of Applied Chemistry
College of Electrical and Computer Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Apr-2018
摘要: In this paper, we report the results of our experiments on and measurements of electrical resistivity and thermoelectric power (Seebeck coefficient) from single-crystalline antimony triselenide (Sb2Se3) single nanowires (NWs) with high resistivity (sigma similar to 4.37 x 10(-4) S/m). A positive Seebeck coefficient of approximately 661 mu V/K at room temperature was obtained using a custom-made thermoelectric power probe with an alternating current lock-in method (the 2 omega technique), which indicates that the thermal transport is dominated by holes. The measured Seebeck coefficient of the NWs is a factor of 2-3 lower than their bulk counterparts and is comparable to that of a highly conductive Sb2Se3 single NWs (approximately -750 mu V/K). We observed an increase in the Seebeck coefficients with increased bias voltages by field-effect gating, which cannot be explained by the modulation of the Fermi level in the NWs.
URI: http://dx.doi.org/10.1007/s00339-018-1741-z
http://hdl.handle.net/11536/144741
ISSN: 0947-8396
DOI: 10.1007/s00339-018-1741-z
期刊: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume: 124
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