標題: Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layer
作者: Lin, Dong
Pi, Shubin
Yang, Jianwen
Tiwari, Nidhi
Ren, Jinhua
Zhang, Qun
Liu, Po-Tsun
Shieh, Han-Ping
顯示科技研究所
Institute of Display
關鍵字: IWO/IWO:N;nitrogen doping;bi-layer;thin film transistor
公開日期: 1-Jun-2018
摘要: In this work, bottom-gate top-contact thin film transistors with double stacked amorphous IWO/ IWO:N channel layer were fabricated. Herein, amorphous IWO and N-doped IWO were deposited as front and back channel layers, respectively, by radio-frequency magnetron sputtering. The electrical characteristics of the bi-layer-channel thin film transistors (TFTs) were examined and compared with those of single-layer-channel (i.e., amorphous IWO or IWO:N) TFTs. It was demonstrated to exhibit a high mobility of 27.2 cm(2)V(-1 )s(-1) and an on/off current ratio of 10(7).Compared to the single peers, bi-layer a-IWO/IWO:N TFTs showed smaller hysteresis and higher stability under negative bias stress and negative bias temperature stress. The enhanced performance could be attributed to its unique double-stacked channel configuration, which successfully combined the merits of the TFTs with IWO and IWO:N channels. The underlying IWO thin film provided percolation paths for electron transport, meanwhile, the top IWO:N layer reduced the bulk trap densities. In addition, the IWO channel/gate insulator interface had reduced defects, and IWO:N back channel surface was insensitive to the ambient atmosphere. Overall, the proposed bi-layer a-IWO/IWO:N TFTs show potential for practical applications due to its possibly long-term serviceability.
URI: http://dx.doi.org/10.1088/1361-6641/aabd11
http://hdl.handle.net/11536/144923
ISSN: 0268-1242
DOI: 10.1088/1361-6641/aabd11
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 33
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