標題: Chemical lift-off process for nitride LEDs from an Eco-GaN template using an AlN/strip-patterned-SiO2 sacrificial layer
作者: Horng, Ray-Hua
Hsueh, Hsu-Hung
Ou, Sin-Liang
Tsai, Chi-Tsung
Tsai, Tsung-Yen
Wuu, Dong-Sing
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: chemical lift-off;Eco-GaN;light-emitting diode;vertical-type LED
公開日期: 1-Mar-2017
摘要: In this research, a nitride light-emitting diode (LED) fabricated on an electroplated Cu substrate can be removed from a GaN/sapphire (Eco-GaN) template by conducting the chemical lift-off (CLO) process using an AlN/strip-patterned-SiO2 intermediate sacrificial layer. The regrowth GaN epilayer deposited on AlN/patterned SiO2/Eco-GaN can achieve a high crystal quality via the epitaxial lateral overgrowth process. To etch the patterned SiO2 and AlN layers, the HF and 80 degrees C-KOH solutions were used, respectively. Due to the use of low-temperature KOH solution, the GaN epilayer would suffer less damage during the CLO process, improving the reuse feasibility for the Eco-GaN template. Moreover, when the etching treatment was used for the AlN layer, a highly lateral etching rate of 0.5mmh(-1) was achieved. Compared to the conventional LED, the vertical-type LED/Cu substrate had a higher output power of 212mW (at 350mA). Based on our estimation, the output power of LED prepared on Cu substrate had an 86% improvement in comparison to that of conventional LED. Obviously, the good optoelectronic performance of the LED/Cu device can be obtained after performing the CLO process. Furthermore, the separated Eco-GaN template has high potential for reuse applications, indicating that this technique is helpful to the cost-effective LED fabrication.
URI: http://dx.doi.org/10.1002/pssa.201600657
http://hdl.handle.net/11536/145198
ISSN: 1862-6300
DOI: 10.1002/pssa.201600657
期刊: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume: 214
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