標題: | The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors |
作者: | Su, Wan-Ching Chang, Ting-Chang Liao, Po-Yung Chen, Yu-Jia Chen, Bo-Wei Hsieh, Tien-Yu Yang, Chung-I Huang, Yen-Yu Chang, Hsi-Ming Chiang, Shin-Chuan Chang, Kuan-Chang Tsai, Tsung-Ming 電子物理學系 Department of Electrophysics |
公開日期: | 6-Mar-2017 |
摘要: | This paper investigates the degradation behavior of InGaZnO thin film transistors (TFTs) under negative bias illumination stress (NBIS). TFT devices with two different source and drain layouts were exanimated: one having a parallel format electrode and the other with UI format electrode. UI means that source/drain electrodes shapes is defined as a forked-shaped structure. The I-V curve of the parallel electrode exhibited a symmetric degradation under forward and reverse sweeping in the saturation region after 1000 s NBIS. In contrast, the I-V curve of the UI electrode structure under similar conditions was asymmetric. The UI electrode structure also shows a stretch-out phenomenon in its C-V measurement. Finally, this work utilizes the ISE-Technology Computer Aided Design (ISE-TCAD) system simulations, which simulate the electron field and IV curves, to analyze the mechanisms dominating the parallel and UI device degradation behaviors. Published by AIP Publishing. |
URI: | http://dx.doi.org/10.1063/1.4975206 http://hdl.handle.net/11536/145292 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.4975206 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 110 |
Appears in Collections: | Articles |