標題: The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors
作者: Su, Wan-Ching
Chang, Ting-Chang
Liao, Po-Yung
Chen, Yu-Jia
Chen, Bo-Wei
Hsieh, Tien-Yu
Yang, Chung-I
Huang, Yen-Yu
Chang, Hsi-Ming
Chiang, Shin-Chuan
Chang, Kuan-Chang
Tsai, Tsung-Ming
電子物理學系
Department of Electrophysics
公開日期: 6-三月-2017
摘要: This paper investigates the degradation behavior of InGaZnO thin film transistors (TFTs) under negative bias illumination stress (NBIS). TFT devices with two different source and drain layouts were exanimated: one having a parallel format electrode and the other with UI format electrode. UI means that source/drain electrodes shapes is defined as a forked-shaped structure. The I-V curve of the parallel electrode exhibited a symmetric degradation under forward and reverse sweeping in the saturation region after 1000 s NBIS. In contrast, the I-V curve of the UI electrode structure under similar conditions was asymmetric. The UI electrode structure also shows a stretch-out phenomenon in its C-V measurement. Finally, this work utilizes the ISE-Technology Computer Aided Design (ISE-TCAD) system simulations, which simulate the electron field and IV curves, to analyze the mechanisms dominating the parallel and UI device degradation behaviors. Published by AIP Publishing.
URI: http://dx.doi.org/10.1063/1.4975206
http://hdl.handle.net/11536/145292
ISSN: 0003-6951
DOI: 10.1063/1.4975206
期刊: APPLIED PHYSICS LETTERS
Volume: 110
顯示於類別:期刊論文