The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors (vol 110, 103502, 2017)

doi:10.1063/1.4979076

標題:	The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors (vol 110, 103502, 2017)
作者:	Su, Wan-Ching Chang, Ting-Chang Liao, Po-Yung Chen, Yu-Jia Chen, Bo-Wei Hsieh, Tien-Yu Yang, Chung-I Huang, Yen-Yu Chang, Hsi-Ming Chiang, Shin-Chuan Chang, Kuan-Chang Tsai, Tsung-Ming 電子物理學系 Department of Electrophysics
公開日期:	10-四月-2017
URI:	http://dx.doi.org/10.1063/1.4979076 http://hdl.handle.net/11536/145401
ISSN:	0003-6951
DOI:	10.1063/1.4979076
期刊:	APPLIED PHYSICS LETTERS
Volume:	110
顯示於類別：	期刊論文