標題: Analysis of Contrasting Degradation Behaviors in Channel and Drift Regions Under Hot Carrier Stress in PDSOI LD N-Channel MOSFETs
作者: Lin, Chien-Yu
Chang, Ting-Chang
Liu, Kuan-Ju
Chen, Li-Hui
Tsai, Jyun-Yu
Chen, Ching-En
Lu, Ying-Hsin
Liu, Hsi-Wen
Liao, Jin-Chien
Chang, Kuan-Chang
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: SOI;N-MOSFETs;LDMOS;hot carrier stress
公開日期: 1-Jun-2017
摘要: This letter studies the effects of hot carrier stress (HCS) in laterally diffused silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors. After HCS, threshold voltage and subthreshold swing degrade, while the ON-state current exhibits degradation after an abnormal spike due to hole trapping in the resistprotective oxide. Impact ionization simulation shows that low doping concentrations in the drift region cause a severe Kirk effect under HCS and more severe degradation at higher gate voltages. However, degradation in the channel contrasts with the simulation result, which suggests an additional mechanism. Variable temperature HCS confirms that channel degradation is instead dominated by temperature.
URI: http://dx.doi.org/10.1109/LED.2017.2694972
http://hdl.handle.net/11536/145554
ISSN: 0741-3106
DOI: 10.1109/LED.2017.2694972
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 38
起始頁: 705
結束頁: 707
Appears in Collections:Articles