完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLee, Shih-Weien_US
dc.contributor.authorShih, Jian-Yuen_US
dc.contributor.authorChen, Kuo-Huaen_US
dc.contributor.authorChiu, Chi-Tsungen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2018-08-21T05:54:05Z-
dc.date.available2018-08-21T05:54:05Z-
dc.date.issued2017-07-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2017.13464en_US
dc.identifier.urihttp://hdl.handle.net/11536/145580-
dc.description.abstractIn this paper, a process scheme for polymer TSV fabrication is proposed to solve the difficulty of polymer liner formation in TSV technology. By using ring trench etching and BCB deposition in a vacuum environment, uniform BCB liner can be successfully fabricated. Electrical measurement by using Kelvin structure is completed to ensure the performance of fabrication. However, a new phenomenon causing tiny resistance changes with the arrangement of TSV is discovered during the measurement of TSV chain. In this research, this effect is discussed in detail by designing different design of experiment (DOE) to pursue good electrical connection and reduce the variance of delay property of each TSV. Based on statistical results, impacts of TSV manufacturing process variance are discussed and the guideline in high density TSV design is found.en_US
dc.language.isoen_USen_US
dc.subject3D ICen_US
dc.subjectPolymer-Based Liner TSVen_US
dc.subjectResistance Variationen_US
dc.titlePolymer-Based Liner TSV Fabrication Scheme and Its Resistance Variationen_US
dc.typeArticleen_US
dc.identifier.doi10.1166/jnn.2017.13464en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume17en_US
dc.citation.spage4712en_US
dc.citation.epage4715en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000402487200038en_US
顯示於類別:期刊論文