標題: Improving the Performance of ZnO Thin-Film Transistors with ZnON Source/Drain Contacts
作者: Kuan, Chin-I
Lin, Horng-Chih
Li, Pei-Wen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Oxide semiconductors;series source/drain (S/D) resistance;thin-film transistors (TFTs);ZnO;ZnON
公開日期: 1-Jul-2017
摘要: Motivation to study the ZnO channel for thin-film transistors (TFTs) is strong in light of its decent high mobility and large bandgap, enabling simultaneous coexistence of high on current and low off-state leakage. Nevertheless, the improvement in device performance for ZnO TFTs has not been fully exercised and even the field-effect mobility (mu(FE)) is degraded with downscaling the channel length owing to considerable series source/drain (S/D) resistance (R-SD). In this paper, we show that inserting a thin contact layer of ZnON between the ZnO channel and Al S/D effectively suppresses the formation of interfacial layer of AlOx and thereby reduces R-SD dramatically. This is evidenced by a significant reduction in R-SD from 30.1 to 14.4 k Omega. mu m measured on 0.5-mu m ZnO TFTs with a ZnON contact layer or not, leading to an improvement in mu(FE) from 18.2 to 29.6 cm(2)/V.s.
URI: http://dx.doi.org/10.1109/TED.2017.2704440
http://hdl.handle.net/11536/145636
ISSN: 0018-9383
DOI: 10.1109/TED.2017.2704440
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 64
起始頁: 2849
結束頁: 2853
Appears in Collections:Articles