標題: Impact of repeated uniaxial mechanical strain on flexible a-IGZO thin film transistors with symmetric and asymmetric structures
作者: Liao, Po-Yung
Chang, Ting-Chang
Su, Wan-Ching
Chen, Bo-Wei
Chen, Li-Hui
Hsieh, Tien-Yu
Yang, Chung-Yi
Chang, Kuan-Chang
Zhang, Sheng-Dong
Huang, Yen-Yu
Chang, Hsi-Ming
Chiang, Shin-Chuan
電子物理學系
Department of Electrophysics
公開日期: 26-Jun-2017
摘要: This letter investigates repeated uniaxial mechanical stress-induced degradation behavior in flexible amorphous In-Ga-Zn-O thin-film transistors (TFTs) of different geometric structures. Two types of via-contact structure TFTs are investigated: symmetrical and UI structure (TFTs with Iand U-shaped asymmetric electrodes). After repeated mechanical stress, I-V curves for the symmetrical structure show a significant negative threshold voltage (VT) shift, due to mechanical stress-induced oxygen vacancy generation. However, degradation in the UI structure TFTs after stress is a negative VT shift along with the parasitic transistor characteristic in the forward-operation mode, with this hump not evident in the reverse-operation mode. This asymmetrical degradation is clarified by the mechanical strain simulation of the UI TFTs. Published by AIP Publishing.
URI: http://dx.doi.org/10.1063/1.4990964
http://hdl.handle.net/11536/145742
ISSN: 0003-6951
DOI: 10.1063/1.4990964
期刊: APPLIED PHYSICS LETTERS
Volume: 110
Appears in Collections:Articles