標題: Localized Tunneling Phenomena of Nanometer Scaled High-K Gate-Stack
作者: Lin, Po-Jui Jerry
Lee, Che-An Andy
Yao, Chih-Wei Kira
Lin, Hsin-Jyun Vincent
Watanabe, Hiroshi
電機工程學系
電信工程研究所
Department of Electrical and Computer Engineering
Institute of Communications Engineering
關鍵字: Coulomb energy variation;high-K dielectrics;random telegraph noise (RTN);single electron;trap-assisted tunneling (TAT)
公開日期: 1-Aug-2017
摘要: The 3-D simulator, which is capable of sensing potential change due to single electron's movement via a local trap inside the high-K gate-stacking block, is developed. Then, we carefully investigate how the electron's movement effects on the reliabilities of high-K gate-stack far beyond 10-nm generations. The simulation result shows that the potential change caused by a single electron's charge is about a few hundered millivolts inside the high-K gate-stacking block. By this result, random telegraph noise (RTN) and trap-assisted tunneling (TAT) are carefully investigated with respect to various applied biases, interface suboxide layer thicknesses, and the dielectric constant of high-K dielectrics (K). We also take into account the Coulomb blockade of a local trap, and then obtain several phase diagrams for distinguishing RTN and TAT under various conditions. It is then found that K = 30 can most effectively suppress the gate leakage current.
URI: http://dx.doi.org/10.1109/TED.2017.2713322
http://hdl.handle.net/11536/145829
ISSN: 0018-9383
DOI: 10.1109/TED.2017.2713322
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 64
起始頁: 3077
結束頁: 3083
Appears in Collections:Articles