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dc.contributor.authorChiu, Yu-Chienen_US
dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorLiou, Guan-Linen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2018-08-21T05:54:21Z-
dc.date.available2018-08-21T05:54:21Z-
dc.date.issued2017-08-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2017.2712709en_US
dc.identifier.urihttp://hdl.handle.net/11536/145832-
dc.description.abstractIn this brief, we reported a ferroelectric versatile memory with strained-gate engineering. The versatile memory with high-strain-gate showed a >40% improvement on ferroelectric hysteresis window, compared to low-strain case. The high compressive stress induced from high nitrogen-content TaN enhances monoclinic-to-orthorhombic phase transition to reach stronger ferrolectric polarization and lower depolarization field. The versatile memory featuring ferroelectric negative capacitance exhibited excellent transfer characteristics of the sub-60-mVdec subthreshold swing, ultralow off-state leakage of <1fA/mu m and > 108 on/off current ratio. Furthermore, the ferroelectric versatile memory can be switched by +/- 5 V under 20-ns speed for a long endurance cycling (similar to 10(12) cycles). The low-power operation can be ascribed to the amplification of the surface potential to reach the strong inversion and fast domain polarization at the correspondingly low program/erase voltages.en_US
dc.language.isoen_USen_US
dc.subjectCharge trpappingen_US
dc.subjectferroelectricen_US
dc.subjectmultilevelen_US
dc.subjectnonvolatile memoryen_US
dc.titleEnergy-Efficient Versatile Memories With Ferroelectric Negative Capacitance by Gate-Strain Enhancementen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2017.2712709en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume64en_US
dc.citation.spage3498en_US
dc.citation.epage3501en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000406268900067en_US
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