標題: Growth of GaN on {12(3)over-bar5}-like Facets of Patterned Sapphire Substrate
作者: Wu, Pei-Yu
Chen, Chien-Chih
Huang, Chia-Yen
Kuo, Hao-Chung
Lin, Kun-Lin
Wu, YewChung Sermon
材料科學與工程學系
光電工程學系
Department of Materials Science and Engineering
Department of Photonics
公開日期: 1-Jan-2017
摘要: GaN has been grown on wet-etched patterned sapphire substrate (PSS) by metal-organic chemical vapor deposition. It has been found that GaN was initiated not only from bottom c-facet but also from E {12 (3) over bar5} facets of hexagonal patterns/pyramids. In this study, a vacancy-PSS on c-plane sapphire was used to investigate the growth of GaN on the E-like facets (E1 and E2) of distorted pyramids. The results show that the orientation relationship between E1-GaN and sapphire is ((11) over bar2 (6) over bar) GaN // ((1) over bar 10 (2) over bar)(sapphire) and [11 (21) over bar] GaN // [11 (2) over bar0](sapphire). At the same time, that between E2-GaN and sapphire is (01 (14) over bar) GaN // (3 (3) over bar0 (6) over bar) sapphire and [02 (2) over bar1] GaN // [11 (2) over bar0] sapphire. (C) 2017 The Electrochemical Society. All rights reserved.
URI: http://dx.doi.org/10.1149/2.0351705jss
http://hdl.handle.net/11536/146007
ISSN: 2162-8769
DOI: 10.1149/2.0351705jss
期刊: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume: 6
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