標題: Formation and characterization of high-performance silicon thin-film transistors with and without location-controlled grain boundary
作者: Liao, Chan-Yu
Lin, Hsiao-Chun
Wang, Chao-Lung
Lee, I-Che
Chou, Chia-Hsin
Li, Yu-Ren
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: excimer laser crystallization (ELC);light absorption layer;location-controlled grain boundary;polycrystalline silicon (poly-Si);thin-film transistor (TFT)
公開日期: 1-十月-2017
摘要: This paper reports the demonstration of structural effects on excimer laser crystallization (ELC) for the Si strip with a recessed-channel structure on the silicon nitride under-layer (RCS-ULN). We revealed that a single location-controlled grain boundary (GB) oriented normal to the Si strip in the middle site without any other GB in the recessed region can be attained via ELC for the RCS-ULN structures with a short recessed region between neighboring long thick regions in a narrow Si strip. This can be attributed to the effective production of a significant 2D lateral thermal gradient in the recessed region and neighboring thick regions. Consequently, the RCS-ULN TFTs fabricated at the position one-half of such an optimal recessed region can achieve a superior field-effect mobility of 670 cm(2) V-1 . s(-1) with minor performance variations since the single-crystal-like Si channel has been adopted.
URI: http://dx.doi.org/10.1088/1361-6439/aa849e
http://hdl.handle.net/11536/146062
ISSN: 0960-1317
DOI: 10.1088/1361-6439/aa849e
期刊: JOURNAL OF MICROMECHANICS AND MICROENGINEERING
Volume: 27
顯示於類別:期刊論文