標題: Study of Crystallinity in mu c-Si: H Films Deposited by Cat-CVD for Thin Film Solar Cell Applications
作者: Hsu, C. H.
Hsu, Y. P.
Yao, F. H.
Huang, Y. T.
Tsai, C. C.
Zan, H. W.
Bi, C. C.
Lu, C. H.
Yeh, C. H.
交大名義發表
National Chiao Tung University
公開日期: 1-Jan-2010
摘要: The crystallinity of the hydrogenated microcrystalline silicon (mu c-Si:H) film was known to influence the solar cell efficiency greatly. Also hydrogen was found to play a critical role in controlling the crystallinity. Instead of employing conventional plasma deposition techniques, this work focused on using catalytic chemical vapor deposition (Cat-CVD) to study the effect of hydrogen dilution and the filament-to-substrate distance on the crystallinity, deposition rate, microstructure factor and electrical property of the mu c-Si: H film. We found that the substrate material and structure can affect the crystallinity of the mu c-Si: H film and the incubation effect. Comparing bare glass, TCO-coated glass, a-Si: H-coated glass and mu c-Si: H-coated glass, the microcrystalline phase grows the fastest onto mu c-Si: H surface, but the slowest onto a-Si: H surface. Surprisingly, the template effect lasted for more than a thousand atomic layers of silicon.
URI: http://dx.doi.org/10.1557/PROC-1245-A21-05
http://hdl.handle.net/11536/146427
ISSN: 0272-9172
DOI: 10.1557/PROC-1245-A21-05
期刊: AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY - 2010
Volume: 1245
起始頁: 465
結束頁: 470
Appears in Collections:Conferences Paper