標題: | Study of Crystallinity in mu c-Si: H Films Deposited by Cat-CVD for Thin Film Solar Cell Applications |
作者: | Hsu, C. H. Hsu, Y. P. Yao, F. H. Huang, Y. T. Tsai, C. C. Zan, H. W. Bi, C. C. Lu, C. H. Yeh, C. H. 交大名義發表 National Chiao Tung University |
公開日期: | 1-一月-2010 |
摘要: | The crystallinity of the hydrogenated microcrystalline silicon (mu c-Si:H) film was known to influence the solar cell efficiency greatly. Also hydrogen was found to play a critical role in controlling the crystallinity. Instead of employing conventional plasma deposition techniques, this work focused on using catalytic chemical vapor deposition (Cat-CVD) to study the effect of hydrogen dilution and the filament-to-substrate distance on the crystallinity, deposition rate, microstructure factor and electrical property of the mu c-Si: H film. We found that the substrate material and structure can affect the crystallinity of the mu c-Si: H film and the incubation effect. Comparing bare glass, TCO-coated glass, a-Si: H-coated glass and mu c-Si: H-coated glass, the microcrystalline phase grows the fastest onto mu c-Si: H surface, but the slowest onto a-Si: H surface. Surprisingly, the template effect lasted for more than a thousand atomic layers of silicon. |
URI: | http://dx.doi.org/10.1557/PROC-1245-A21-05 http://hdl.handle.net/11536/146427 |
ISSN: | 0272-9172 |
DOI: | 10.1557/PROC-1245-A21-05 |
期刊: | AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY - 2010 |
Volume: | 1245 |
起始頁: | 465 |
結束頁: | 470 |
顯示於類別: | 會議論文 |