標題: Polycrystalline-Silicon Channel Trap Induced Transient Read Instability in a 3D NAND Flash Cell String
作者: Tsai, Wen-Jer
Lin, W. L.
Cheng, C. C.
Ku, S. H.
Chou, Y. L.
Liu, Lenvis
Hwang, S. W.
Lu, T. C.
Chen, K. C.
Wang, Tahui
Lu, Chih-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-一月-2016
摘要: Vt instability caused by grain-boundary trap (GBT) in the poly-crystalline silicon (poly-Si) channel of a 3D NAND string are comprehensively studied. Experimental results reveal that trapping/detrapping of GBT would cause transient cell current with a time constant of lOus or longer, and this transient is strongly affected by the bias history. Sensing offset between program/erase verify (PV/EV) and read (RD) results in "pseudo" charge loss/gain that reduces the sensing margin. Modified EV, PV, or RD bias schemes are suggested to mitigate this effect.
URI: http://hdl.handle.net/11536/146471
ISSN: 2380-9248
期刊: 2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
顯示於類別:會議論文