標題: InN Nanopillar Devices with Strong Photoresponse
作者: Hsu, Lung-Hsing
Kuo, Chien-Ting
Cheng, Yuh-Jen
Chen, Kuan-Chao
Kuo, Hao-Chung
Lin, Shih-Yen
Lin, Chien-Chung
光電系統研究所
照明與能源光電研究所
光電工程學系
Institute of Photonic System
Institute of Lighting and Energy Photonics
Department of Photonics
關鍵字: Infrared;Indium compounds;photodetection devices;nanostructured materials
公開日期: 1-Jan-2016
摘要: The InN pillars/p-GaN is promising for extended visible and infrared absorption. The higher growth temperature and more V/III could trend toward hexagonal InN pillars epitaxy, fabricated by a low-pressure metal organic chemical vapor deposition. The tensile strain effect and the peak energy blue-shift phenomenon due to higher Fermi-level to acceptor emission were investigated via Raman and photoluminescence (PL) measurements. The high quality InN pillars reveal no indium droplets by X-ray diffraction pattern. A InN pillars photodetection device is demonstrated with extended IR response, and the portion photocurrent of InN detection as high as 13% measured via AM1.5G solar simulated spectra.
URI: http://hdl.handle.net/11536/146538
ISSN: 0160-8371
期刊: 2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
起始頁: 2790
結束頁: 2793
Appears in Collections:Conferences Paper