A highly reliable self-aligned graded oxide WOx resistance memory: Conduction mechanisms and reliability

doi:10.1109/VLSIT.2007.4339703

標題:	A highly reliable self-aligned graded oxide WOx resistance memory: Conduction mechanisms and reliability
作者:	Ho, ChiaHua Lai, E. K. Lee, M. D. Pan, C. L. Yao, Y. D. Hsieh, K. Y. Liu, Rich Lu, C. Y. 材料科學與工程學系 Department of Materials Science and Engineering
關鍵字:	RRAM;WOx;self-aligned;reliability
公開日期:	1-Jan-2007
摘要:	WOx formed by plasmas oxidation shows promising multibit/cell resistance memory characteristics [1]. The simple memory is completely self-aligned, requiring no additional masks and has a small 6F(2) cell size. In this work we introduce a graded oxide device that is highly reliable (250 degrees C baking for > 2,000 hrs). The conduction mechanism and factors affecting the memory reliability are examined extensively.
URI:	http://dx.doi.org/10.1109/VLSIT.2007.4339703 http://hdl.handle.net/11536/146578
DOI:	10.1109/VLSIT.2007.4339703
期刊:	2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS
起始頁:	228
Appears in Collections:	Conferences Paper