標題: WAFER SIZE MOS2 WITH FEW MONOLAYER SYNTHESIZED BY H2S SULFURIZATION
作者: Ho, Yen-Teng
Chu, Yung-Ching
Wei, Lin-Lung
Luong, Tien-Tung
Lin, Chih-Chien
Cheng, Chun-Hung
Hsu, Hung-Ru
Tu, Yung-Yi
Chang, Edward Yi
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Jan-2017
摘要: Wafer sized, high quality continuous fihns would be a key demand for MoS2 implemented in circuit application. In this study, the growth of few monolayer Mo-S2 on 4 inches SiO2/Si substrate were demonstrated. The MoS2 thin films were synthesized by sulfurized in a furnace from the ultra-thin MoO3 starting materials by using H2S. The obtained MoS2 thin film examined by Raman analysis and Photoluminescence (PL), shows the semiconductor nature with direct transition peaks of 1.86 eV and 1.99 eV. The 4 5 monolayer of MoS2 with thickness around 2.6 nm is confirmed by cross-sectional view of transmission electron microscopy (TEM). Additionally, the DC characteristics of MoS2 MOSFETs exhibit at least 2 order in on/off current ratio, demonstrating the feasibility for circuit application.
URI: http://hdl.handle.net/11536/146681
期刊: 2017 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC 2017)
Appears in Collections:Conferences Paper