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dc.contributor.authorHsin, Y. M.en_US
dc.contributor.authorHuang, W. K.en_US
dc.contributor.authorLiu, Y. C.en_US
dc.contributor.authorYan, B. E.en_US
dc.contributor.authorChen, W. Z.en_US
dc.date.accessioned2019-04-03T06:47:51Z-
dc.date.available2019-04-03T06:47:51Z-
dc.date.issued2008-01-01en_US
dc.identifier.isbn978-0-8194-7074-4en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://dx.doi.org/10.1117/12.761553en_US
dc.identifier.urihttp://hdl.handle.net/11536/146744-
dc.description.abstractIn this work, three approaches are proposed to implement high-speed 850-nm optical receivers fully in standard bulk 0.18 pm silicon (Si) CMOS technology. In the first approach, the lateral p-i-n photodiode (PD) with designed block well to limit the photocarriers being generated from the laterally depleted regions is integrated in optical receiver. The receiver consists of TIA, LA, offset-cancellation-network and buffer to provide a conversion gain of 110 dB Omega and data rate of 2.5 Gbps operation. In the second receiver, the spatially modulated PD (SMPD) with -3 dB bandwidth of 590 MHz is integrated in optical receiver with the extra adaptive equalizer and demonstrates a data rate of 3.125 Gbps. Finally, the proposed novel structure of PD eliminates the slow diffusion photocarriers by using body contact design to create a new current path under the PD. A bandwidth of 2.8 GHz with 100 % improvement in PD is obtained. The eye diagrams of PD with cable connected amplifiers at 2.5 Gbps, 4 Gbps and 5 Gbps are demonstrated. Furthermore, the optical receiver's optical-electrical (O-E) conversion bandwidth is also increased from 3.6 GHz to 4.3 GHz. To our knowledge, these are the highest O-E conversion bandwidth of the PD and optical receiver ever reported by using the standard bulk 0.18 mu m Si CMOS technology.en_US
dc.language.isoen_USen_US
dc.subjectSien_US
dc.subject850-nmen_US
dc.subjectoptical receiveren_US
dc.subjectCMOSen_US
dc.subjectphotodiodeen_US
dc.titleA high-speed 850-nm optical receiver by integrating Si photodiode and CMOS ICen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1117/12.761553en_US
dc.identifier.journalPHOTONICS PACKAGING, INTEGRATION, AND INTERCONNECTS VIIIen_US
dc.citation.volume6899en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000254453000022en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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