Title: Design Space Exploration Considering Back-Gate Biasing Effects for Negative-Capacitance Transition-Metal-Dichalcogenide (TMD) Field-Effect Transistors
Authors: You, Wei-Xiang
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: Negative-capacitance FET;2D material;transition-metal-dichalcogenide
Issue Date: 1-Jan-2017
Abstract: In this work, with the aid of an analytical and scalable model, we explore the design space for negative-capacitance (NC) FETs with a 2D semiconducting transition-metal-dichalcogenide (TMD) channel with emphasis on the impact of back-gate biasing. Our study indicates that, to mitigate the conflict between subthreshold swing (SS) and hysteresis and to maximize the design space for the NC-TMDFET, a thin buried oxide (BOX) and an adequate reverse back-gate bias can be applied to achieve the optimum design.
URI: http://hdl.handle.net/11536/146765
Journal: 2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM)
Begin Page: 136
End Page: 137
Appears in Collections:Conferences Paper