Title: | Design Space Exploration Considering Back-Gate Biasing Effects for Negative-Capacitance Transition-Metal-Dichalcogenide (TMD) Field-Effect Transistors |
Authors: | You, Wei-Xiang Su, Pin 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Keywords: | Negative-capacitance FET;2D material;transition-metal-dichalcogenide |
Issue Date: | 1-Jan-2017 |
Abstract: | In this work, with the aid of an analytical and scalable model, we explore the design space for negative-capacitance (NC) FETs with a 2D semiconducting transition-metal-dichalcogenide (TMD) channel with emphasis on the impact of back-gate biasing. Our study indicates that, to mitigate the conflict between subthreshold swing (SS) and hysteresis and to maximize the design space for the NC-TMDFET, a thin buried oxide (BOX) and an adequate reverse back-gate bias can be applied to achieve the optimum design. |
URI: | http://hdl.handle.net/11536/146765 |
Journal: | 2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM) |
Begin Page: | 136 |
End Page: | 137 |
Appears in Collections: | Conferences Paper |