标题: | Observation of Extreme-Ultraviolet-Irradiation-Induced Damages on High-Dielectric-Constant Dielectrics |
作者: | Tsui, Bing-Yue Li, Po-Hsueh Yen, Chih-Chan 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | Border traps;extreme ultraviolet (EUV);high-dielectric-constant dielectrics;hole traps;interface states |
公开日期: | 1-十一月-2011 |
摘要: | Extreme ultraviolet (EUV) irradiation may induce damages on high-dielectric-constant (high-k) dielectrics. In this letter, the EUV-irradiation-induced damages on HfSiO, HfAlO, and Al 2 O 3 are investigated. After EUV irradiation, hole traps, border traps, and interface traps are all increased. All of the three high-k dielectrics exhibit poorer immunity to the EUV irradiation than SiO(2). The oxide traps scale down with the dielectric thickness. Interfacial layer plays an important role in the increase of border traps and interface traps. Therefore, high-quality SiO-like interfacial layer is critical for radiation-hard devices. |
URI: | http://dx.doi.org/10.1109/LED.2011.2165521 http://hdl.handle.net/11536/14695 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2011.2165521 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 32 |
Issue: | 11 |
起始页: | 1594 |
结束页: | 1596 |
显示于类别: | Articles |
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