GaN-based vertical-cavity surface-emitting lasers operating at high temperature

Abstract

We report on GaN-based vertical-cavity surface emitting lasers (VCSELs) capable of high temperature operation. The structures of VCSELs include double dielectric distributed Bragg reflectors and bonded to a silicon substrate with a p-side-down configuration, allowing a better heat dissipation. The temperature dependent lasing characteristics of VCSELs can sustain to 350K.