標題: InAs-based heterostructure field-effect transistor using AlAs0.16Sb0.84 double barriers
作者: Lin, Yue-Min
Lin, Kun-Ping
Lee, Ting-Chi
Li, Meng-Ying
Lee, Chien-Ping
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 3-七月-2014
摘要: An InAs-channel heterostructure field-effect transistor on GaAs substrates is presented. The conduction channel was formed by the InAs/AlAs0.16Sb0.84/AlSb quantum well. With the addition of the AlAs0.16Sb0.84 layer, holes that are generated by impact ionisation at high voltages are effectively confined in the InAs channel because of the large Delta Ev in this type-I heterostructure. By suppressing the hole injection into and accumulation in the buffer layer, the feedback through the back gate is eliminated and excellent output characteristics were obtained. The fabricated devices had a threshold voltage of about -0.6 V with a channel mobility of 18 100 cm(2)/V-s and a sheet carrier density of 1.2 x 10(12) cm(-2).
URI: http://dx.doi.org/10.1049/el.2014.0629
http://hdl.handle.net/11536/147776
ISSN: 0013-5194
DOI: 10.1049/el.2014.0629
期刊: ELECTRONICS LETTERS
Volume: 50
起始頁: 1018
顯示於類別:期刊論文