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dc.contributor.authorChang, Po-Chunen_US
dc.contributor.authorHsiao, Chih-Jenen_US
dc.contributor.authorLumbantoruan, Franky Juandaen_US
dc.contributor.authorWu, Chia-Hsunen_US
dc.contributor.authorLin, Yen-Kuen_US
dc.contributor.authorLin, Yueh-Chinen_US
dc.contributor.authorSze, Simon M.en_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2019-04-02T05:58:40Z-
dc.date.available2019-04-02T05:58:40Z-
dc.date.issued2018-01-01en_US
dc.identifier.issn2168-6734en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JEDS.2018.2859811en_US
dc.identifier.urihttp://hdl.handle.net/11536/147994-
dc.description.abstractIn this paper, the InGaAs junctionless (JL) FinFET with notable electrical performance is demonstrated. The device with W-fin down to 20 nm, EOT of 2.1 nm, and L-G = 60 nm shows high I-ON = 188 mu A/mu m at V-DD = 0.5 V and I-OFF = 100 nA/mu m, I-ON/I-OFF = 5 x 10(5), DIBL = 106 mV/V and SS = 96 mV/dec. The device also exhibits a decent extrinsic transconductance (G(m)) of 1142 mu S/mu m at V-DS of 0.5 V. This high performance is attributed to the moderate doping concentration to ensure the channel carriers could be effectively depleted and the low R-SD realized by self-aligned Ni-InGaAs alloy S/D. Furthermore, we also examine the temperature dependence of the main electrical parameters of the JL transistor.en_US
dc.language.isoen_USen_US
dc.subjectJunctionless (JL) transistoren_US
dc.subjectInGaAs nMOSFETsen_US
dc.subjectFinFETen_US
dc.subjecthigh-k dielectricen_US
dc.subjectNi-InGaAsen_US
dc.subjectmetal source/drainen_US
dc.titleInGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/Den_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JEDS.2018.2859811en_US
dc.identifier.journalIEEE JOURNAL OF THE ELECTRON DEVICES SOCIETYen_US
dc.citation.volume6en_US
dc.citation.spage856en_US
dc.citation.epage860en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000441422600004en_US
dc.citation.woscount0en_US
Appears in Collections:Articles