InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D

Abstract

In this paper, the InGaAs junctionless (JL) FinFET with notable electrical performance is demonstrated. The device with W-fin down to 20 nm, EOT of 2.1 nm, and L-G = 60 nm shows high I-ON = 188 mu A/mu m at V-DD = 0.5 V and I-OFF = 100 nA/mu m, I-ON/I-OFF = 5 x 10(5), DIBL = 106 mV/V and SS = 96 mV/dec. The device also exhibits a decent extrinsic transconductance (G(m)) of 1142 mu S/mu m at V-DS of 0.5 V. This high performance is attributed to the moderate doping concentration to ensure the channel carriers could be effectively depleted and the low R-SD realized by self-aligned Ni-InGaAs alloy S/D. Furthermore, we also examine the temperature dependence of the main electrical parameters of the JL transistor.