標題: The influence on electrical characteristics of amorphous indium tungsten oxide thin film transistors with multi-stacked active layer structure
作者: Ruan, Dun-Bao
Liu, Po-Tsun
Gan, Kai-Jhih
Chiu, Yu-Chuan
Yu, Min-Chin
Chien, Ta-Chun
Chen, Yi-Heng
Kuo, Po-Yi
Sze, Simon M.
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: Indium-tungsten-oxide;Thin-film transistors;Multi-stacked active layer;High-k;Interfacial layer engineering
公開日期: 30-Nov-2018
摘要: In order to effectively enhance the carrier mobility and device stability, simultaneously, a multi-stacked active layer of thin film transistor with a novel type of channel material, amorphous indium-tungsten-oxide, is proposed in this work. Atop-cappingoxygen-rich indium-tungsten-zinc-oxide thin film is used for suppressing the influence of the molecular adsorption or desorption from the ambient at the back channel in the gate bias stress test. In addition, a bottom-bufferingoxygen-rich indium-tungsten-zinc-oxide thin film is deposited to avoid the oxygen vacancy generation during the following thermal process. On the other hand, a 1-nm thick WO3 film is inserted between the high-k gate insulator and active layer, which play important roles as interfacial layer for improving the interface quality and keeping the stability of front channel film. Besides, an HfO2 dielectric film is chosen as gate insulator for realizing the low-voltage operation. As a result, the novel tungsten doped channel material with both-sideoxygen-rich active layer exhibits a high I-ON/I-OFF current ratio of similar to 6x10(7) for low gate leakage current, attributing to the Atop-cappingoxygen-rich thin film. Then, a high field-effect mobility of similar to 27.9cm(2)/V.s and a low sub-threshold swing of 0.079 V/decade are achieved by the good interface quality. This structure with both-sideoxygen-rich active layer exhibits its potential application for the future high-resolution and large-size display manufacture.
URI: http://dx.doi.org/10.1016/j.tsf.2018.09.005
http://hdl.handle.net/11536/148281
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2018.09.005
期刊: THIN SOLID FILMS
Volume: 666
起始頁: 94
結束頁: 99
Appears in Collections:Articles