Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lai, Hong-Da | en_US |
dc.contributor.author | Jian, Sheng-Rui | en_US |
dc.contributor.author | Tuyen, Le Thi Cam | en_US |
dc.contributor.author | Phuoc Huu Le | en_US |
dc.contributor.author | Luo, Chih-Wei | en_US |
dc.contributor.author | Juang, Jenh-Yih | en_US |
dc.date.accessioned | 2019-04-02T05:59:54Z | - |
dc.date.available | 2019-04-02T05:59:54Z | - |
dc.date.issued | 2018-10-01 | en_US |
dc.identifier.issn | 2072-666X | en_US |
dc.identifier.uri | http://dx.doi.org/10.3390/mi9100518 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/148375 | - |
dc.description.abstract | The nanomechanical properties and nanoindentation responses of bismuth selenide (Bi2Se3) thin films are investigated in this study. The Bi2Se3 thin films are deposited on c-plane sapphire substrates using pulsed laser deposition. The microstructural properties of Bi2Se3 thin films are analyzed by means of X-ray diffraction (XRD). The XRD results indicated that Bi2Se3 thin films are exhibited the hexagonal crystal structure with a c-axis preferred growth orientation. Nanoindentation results showed the multiple pop-ins displayed in the loading segments of the load-displacement curves, suggesting that the deformation mechanisms in the hexagonal-structured Bi2Se3 films might have been governed by the nucleation and propagation of dislocations. Further, an energetic estimation of nanoindentation-induced dislocation associated with the observed pop-in effects was made using the classical dislocation theory. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Bi2Se3 thin films | en_US |
dc.subject | nanoindentation | en_US |
dc.subject | hardness | en_US |
dc.subject | pop-in | en_US |
dc.title | Nanoindentation of Bi2Se3 Thin Films | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.3390/mi9100518 | en_US |
dc.identifier.journal | MICROMACHINES | en_US |
dc.citation.volume | 9 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000448554800044 | en_US |
dc.citation.woscount | 2 | en_US |
Appears in Collections: | Articles |