標題: Revealing conducting filament evolution in low power and high reliability Fe3O4/Ta2O5 bilayer RRAM
作者: Chang, Chia-Fu
Chen, Jui-Yuan
Huang, Guan-Min
Lin, Ting-Yi
Tai, Kuo-Lun
Huang, Chih-Yang
Yeh, Ping-Hung
Wu, Wen-Wei
交大名義發表
材料科學與工程學系
National Chiao Tung University
Department of Materials Science and Engineering
關鍵字: RRAM;Ta2O5/Fe3O4 bilayer;Conducting filaments;Low power consumption;Reliability;In/Ex-situ TEM
公開日期: 1-Nov-2018
摘要: In this work, we used the polycrystalline-Fe3O4 to improve the reliability of the Ag/Ta2O5/Pt resistive random access memory (RRAM). In both the Ag/Ta2O5/Fe3O4/Pt and Ag/Fe3O4/Ta2O5/Pt structures, the switching properties for these bilayer RRAMs were measured in atmosphere and vacuum environments. The results demonstrated that the humidity would affect the Ag filament formation in different environments, and the Ta2O5 and Fe3O4 interface in a different sequence would change the performance of the device, particularly the Forming voltage. Furthermore, the switching voltage and reliability of these bilayer RRAMs was better than single-layer RRAM device, which significantly increased endurance, especially in the Ag/Fe3O4/Ta2O5/Pt device. We also observed the conducting filament shape and evolution during Forming via in/ex-situ transmission electron microscopy (TEM) in the Ag/Fe3O4/Ta2O5/Pt system. In low humidity, the conducting filament was composed of many weak filaments in a low-resistance state (LRS), where the grain boundaries in the Fe3O4 layer limited filament size. The results of energy dispersive spectrometry (EDS) analysis demonstrated that the filament was composed of Ag metal. This study provided detailed switching knowledge of the bilayer RRAM for improving the reliability and power consumption of the device and new design viewpoints of the RRAM structure in future applications.
URI: http://dx.doi.org/10.1016/j.nanoen.2018.09.029
http://hdl.handle.net/11536/148394
ISSN: 2211-2855
DOI: 10.1016/j.nanoen.2018.09.029
期刊: NANO ENERGY
Volume: 53
起始頁: 871
結束頁: 879
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