標題: | Monolithic Low Noise and Low Zero-g Offset CMOS/MEMS Accelerometer Readout Scheme |
作者: | Liu, Yu-Sian Wen, Kuei-Ann 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Accelerometer readout;low noise;low zero-g offset |
公開日期: | 1-Dec-2018 |
摘要: | A monolithic low noise and low zero-g offset CMOS/MEMS accelerometer and readout scheme in standard 0.18 m CMOS mixed signal UMC process is presented. The low noise chopper architecture and telescopic topology is developed to achieve low noise. The experiments show noise floor is 421.70 g/Hz. The whole system has 470 mV/g sensitivity. The power consumption is about 1.67 mW. The zero-g trimming circuit reduces the offset from 1242.63 mg to 2.30 mg. |
URI: | http://dx.doi.org/10.3390/mi9120637 http://hdl.handle.net/11536/148681 |
ISSN: | 2072-666X |
DOI: | 10.3390/mi9120637 |
期刊: | MICROMACHINES |
Volume: | 9 |
Appears in Collections: | Articles |