標題: | Simulation of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriers |
作者: | Chang, YA Kuo, HC Chang, YH Wang, SC 光電工程學系 Department of Photonics |
關鍵字: | semiconductor lasers;optical gain properties;numerical simulation;III-V semiconductors |
公開日期: | 1-Nov-2004 |
摘要: | In this article, the laser performance of the 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1 - xNx quantum-well (QW) lasers with various GaAs1 - xNx strain compensated barriers (x = 0%, 0.5%, 1%, and 2%) has been numerically investigated with a laser technology integrated simulation program. The simulation results suggest that with x = 0% and 0.5% can have better optical gain properties and high characteristic temperature coefficient To values of 110 and 94 K at the temperature range of 300-370 K. As the nitrogen composition in GaAs1 - xNx barrier increases more than 1% the laser performance degrades rapidly and the To value decreases to 87 K at temperature range of 300-340 K. This can be attributed to the decrease of conduction band carrier confinement potential between In0.4Ga0.6As0.986N0.014 QW and GaAs1 - xNx barrier and the increase of electronic leakage current. Finally, the temperature dependent electronic leakage current in the InGaAsN/GaAs1 - xNx quantum-well lasers are also investigated. (C) 2004 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.optcom.2004.07.009 http://hdl.handle.net/11536/148824 |
ISSN: | 0030-4018 |
DOI: | 10.1016/j.optcom.2004.07.009 |
期刊: | OPTICS COMMUNICATIONS |
Volume: | 241 |
起始頁: | 195 |
結束頁: | 202 |
Appears in Collections: | Articles |