標題: CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODES
作者: TAI, K
HUANG, KF
WU, CC
WYNN, JD
電子物理學系
光電工程研究所
Department of Electrophysics
Institute of EO Enginerring
關鍵字: CHEMICAL VAPOR DEPOSITION;SEMICONDUCTOR LASERS
公開日期: 22-七月-1993
摘要: Vertical cavity top surface emitting lasers in the 0.66 mum visible spectral region were fabricated by the metal-organic chemical vapour deposition technique. The continuous wave threshold currents I(th) are 3.9 and 4.6 mA at -75 and -25-degrees-C, respectively, for 15 mum diameter devices. The lasers can also be operated at room temperature, but only in a pulsed mode with an I(th) of 12 mA at 25-degrees-C.
URI: http://dx.doi.org/10.1049/el:19930881
http://hdl.handle.net/11536/149111
ISSN: 0013-5194
DOI: 10.1049/el:19930881
期刊: ELECTRONICS LETTERS
Volume: 29
起始頁: 1314
結束頁: 1316
顯示於類別:期刊論文