標題: | Growth and characterizations of GaN on SiC substrates with buffer layers |
作者: | Lin, CF Cheng, HC Chi, GC Feng, MS Guo, JD Hong, JMH Chen, CY 材料科學與工程學系 電子工程學系及電子研究所 奈米中心 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics Nano Facility Center |
公開日期: | 1-九月-1997 |
摘要: | High quality GaN epitaxial layers were grown on 6H-SiC substrates by using low-pressure metalorganic chemical vapor deposition method, Samples employing a three-period GaN/Al0.08Ga0.92N (100 Angstrom/100 Angstrom) as a buffer layer produce a good quality GaN epitaxial layer, with mobility and carrier concentration of 612 cm(2)/V.s and 1.3x10(17) cm(-3) (at 300 K), respectively, The enhanced electron mobility in the Al0.08Ga0.92N/GaN heterostructures is also observed, By using the van der Pauw method of Hall measurement, the sheet carrier density and mobility at 4.2 K for the Al0.08Ga0.92N/GaN heterostructure are 5.8x10(12) cm(-2) and 5300 cm(2)/V.s, respectively. Strong SdH (Shubnikov-de Haas) oscillations were observed to confirm the two-dimensional electron gas (2DEG) phenomenon at the AlGaN/GaN top heterointerface. In addition, an extra SdH oscillation also resulted from the high-duality 2DEG channel of the GaN/AlGaN bottom heterointerface. (C) 1997 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.366048 http://hdl.handle.net/11536/149627 |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.366048 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 82 |
起始頁: | 2378 |
結束頁: | 2382 |
顯示於類別: | 期刊論文 |