標題: Growth and characterizations of GaN on SiC substrates with buffer layers
作者: Lin, CF
Cheng, HC
Chi, GC
Feng, MS
Guo, JD
Hong, JMH
Chen, CY
材料科學與工程學系
電子工程學系及電子研究所
奈米中心
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
Nano Facility Center
公開日期: 1-Sep-1997
摘要: High quality GaN epitaxial layers were grown on 6H-SiC substrates by using low-pressure metalorganic chemical vapor deposition method, Samples employing a three-period GaN/Al0.08Ga0.92N (100 Angstrom/100 Angstrom) as a buffer layer produce a good quality GaN epitaxial layer, with mobility and carrier concentration of 612 cm(2)/V.s and 1.3x10(17) cm(-3) (at 300 K), respectively, The enhanced electron mobility in the Al0.08Ga0.92N/GaN heterostructures is also observed, By using the van der Pauw method of Hall measurement, the sheet carrier density and mobility at 4.2 K for the Al0.08Ga0.92N/GaN heterostructure are 5.8x10(12) cm(-2) and 5300 cm(2)/V.s, respectively. Strong SdH (Shubnikov-de Haas) oscillations were observed to confirm the two-dimensional electron gas (2DEG) phenomenon at the AlGaN/GaN top heterointerface. In addition, an extra SdH oscillation also resulted from the high-duality 2DEG channel of the GaN/AlGaN bottom heterointerface. (C) 1997 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.366048
http://hdl.handle.net/11536/149627
ISSN: 0021-8979
DOI: 10.1063/1.366048
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 82
起始頁: 2378
結束頁: 2382
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