標題: Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices
作者: Lin, Chih-Yang
Lee, Dai-Ying
Wang, Sheng-Yi
Lin, Chun-Chieh
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Al2O3;Resistive switching;Nonvolatile memory;RRAM
公開日期: 25-Dec-2008
摘要: Resistive switching characteristics of Pt/Ti/Al2O3/Pt memory devices annealed at various temperatures including 400 degrees C, 500 degrees C and 600 degrees C for 1 h under ambient condition were investigated in the study. The Al2O3 thin films annealed at up to 600 degrees C for 1 h remain amorphous phase based on the X-ray diffraction (XRD) analyses. As increasing annealing temperature, the forming voltage (activating the pristine device) of the memory device decreases in contrast to the rising trend of the turn-on voltage (switching from high to low resistance state). However, the turn-off voltage (switching from low to high resistance state) is almost uninfluenced by thermal annealing. These phenomena might be attributed to the interdiffusion between Ti and Al2O3, based on the analyzed results of secondary ion mass spectroscopy (SIMS) and high resolution transmission electron microscope (HR-TEM). Moreover, the thermal annealing process eventually creates high conducting paths with a high density of oxygen vacancies between the two electrodes. (c) 2008 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.surfcoat.2008.06.133
http://hdl.handle.net/11536/149657
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2008.06.133
期刊: SURFACE & COATINGS TECHNOLOGY
Volume: 203
起始頁: 628
結束頁: 631
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