完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLiu, HWen_US
dc.contributor.authorSu, HPen_US
dc.contributor.authorLai, WKen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2019-04-02T05:59:08Z-
dc.date.available2019-04-02T05:59:08Z-
dc.date.issued1997-09-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1837999en_US
dc.identifier.urihttp://hdl.handle.net/11536/149658-
dc.description.abstractTo be utilized in the high density dynamic random access memory devices, low-pressure dry oxidation of the very thin nitrides has been performed to successfully obtain the ultrathin capacitors' dielectrics with the effective oxide thickness (t(ox,eff)) of 30 - 60 Angstrom. For the electrical properties, the low-pressure dry oxidized (LPDO) nitrides express thinner effective oxide thickness, lower leakage current, and higher reliability than do the atmospheric pressure dry oxidized (APDO) nitrides. After analyzing the diluted HF etching profiles, Auger electron spectrum and Fourier transform infrared spectrum data, an oxide/nitride/oxide (O/N/O) structure is realized for the LPDO samples with respect to the nitride/oxide structure for the APDO ones. This ultrathin O/N/O structure is believed to be the main cause of improving the electrical characteristics. Finally, a low-pressure enhanced oxidation model is also proposed to explain the unusual oxidation phenomenon on the top of the nitride films. The mechanisms of APDO and atmospheric pressure wet oxidation of nitride films are also compared.en_US
dc.language.isoen_USen_US
dc.titleThe oxidation mechanism of low-pressure dry oxidation of nitrides for memory devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1837999en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume144en_US
dc.citation.spage3288en_US
dc.citation.epage3293en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1997XY20000073en_US
dc.citation.woscount0en_US
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