Low-V-t TaN/HfLaO n-MOSFETs Using Low-Temperature Formed Source-Drain Junctions

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DC 欄位	值	語言
dc.contributor.author	Lin, S. H.	en_US
dc.contributor.author	Liu, S. L.	en_US
dc.contributor.author	Yeh, F. S.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.date.accessioned	2019-04-02T06:00:59Z	-
dc.date.available	2019-04-02T06:00:59Z	-
dc.date.issued	2009-01-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2008.2009011	en_US
dc.identifier.uri	http://hdl.handle.net/11536/149723	-
dc.description.abstract	We report low-threshold-voltage (V-t) TaN/HfLaO n-MOSFETs using solid-phase-diffusion (SPD)-formed junctions at a low temperature of 650 degrees C. The gate-first and self-aligned TaN/HflLaO n-MOSFETs using Ni/Sb SPID-formed source-drain junctions showed a low Vt of 0.16 V and a peak electron mobility of 187 cm(2)/V . s at a small 1.3-nm equivalent oxide thickness.	en_US
dc.language.iso	en_US	en_US
dc.subject	HfLaO	en_US
dc.subject	low V-t	en_US
dc.subject	solid-phase diffusion (SPD)	en_US
dc.title	Low-V-t TaN/HfLaO n-MOSFETs Using Low-Temperature Formed Source-Drain Junctions	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2008.2009011	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	30	en_US
dc.citation.spage	75	en_US
dc.citation.epage	77	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000262364200025	en_US
dc.citation.woscount	5	en_US
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