標題: Orientation-dependent potential barriers in case of epitaxial Pt-BiFeO3-SrRuO3 capacitors
作者: Pintilie, L.
Dragoi, C.
Chu, Y. H.
Martin, L. W.
Ramesh, R.
Alexe, M.
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: bismuth compounds;electrodes;ferroelectric capacitors;ferroelectric thin films;leakage currents;permittivity;platinum;pulsed laser deposition;strontium compounds
公開日期: 8-Jun-2009
摘要: The leakage current in epitaxial BiFeO3 capacitors with bottom SrRuO3 and top Pt electrodes, grown by pulsed laser deposition on SrTiO3 (100), SrTiO3 (110), and SrTiO3 (111) substrates, is investigated by current-voltage (I-V) measurements in the 100-300 K temperature range. It is found that the leakage current is interface-limited and strongly dependent on the orientation of the substrate. The potential barriers at the electrode interfaces are estimated to about 0.6, 0.77, and 0.93 eV for the (100), (110), and (111) orientations, respectively.
URI: http://dx.doi.org/10.1063/1.3152784
http://hdl.handle.net/11536/149792
ISSN: 0003-6951
DOI: 10.1063/1.3152784
期刊: APPLIED PHYSICS LETTERS
Volume: 94
Appears in Collections:Articles