標題: | Orientation-dependent potential barriers in case of epitaxial Pt-BiFeO3-SrRuO3 capacitors |
作者: | Pintilie, L. Dragoi, C. Chu, Y. H. Martin, L. W. Ramesh, R. Alexe, M. 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | bismuth compounds;electrodes;ferroelectric capacitors;ferroelectric thin films;leakage currents;permittivity;platinum;pulsed laser deposition;strontium compounds |
公開日期: | 8-Jun-2009 |
摘要: | The leakage current in epitaxial BiFeO3 capacitors with bottom SrRuO3 and top Pt electrodes, grown by pulsed laser deposition on SrTiO3 (100), SrTiO3 (110), and SrTiO3 (111) substrates, is investigated by current-voltage (I-V) measurements in the 100-300 K temperature range. It is found that the leakage current is interface-limited and strongly dependent on the orientation of the substrate. The potential barriers at the electrode interfaces are estimated to about 0.6, 0.77, and 0.93 eV for the (100), (110), and (111) orientations, respectively. |
URI: | http://dx.doi.org/10.1063/1.3152784 http://hdl.handle.net/11536/149792 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.3152784 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 94 |
Appears in Collections: | Articles |