标题: | High Performance of Ge nMOSFETs Using SiO2 Interfacial Layer and TiLaO Gate Dielectric |
作者: | Chen, W. B. Chin, Albert 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | Ge;nMOSFETs;TaN;TiLaO |
公开日期: | 1-一月-2010 |
摘要: | Using a SiO2 interfacial layer and a high-kappa gate TiLaO dielectric, the TaN/TiLaO/SiO2 on Ge/Si nMOSFETs in this study showed a small 1.1-nm capacitance equivalent thickness, a good high field mobility of 201 cm(2)/(V . s) at 0.5 MV/cm, and a very low OFF-state leakage current of 3.5 x 10(-10) A/mu m. The self-aligned and gate-first metal-gate/high-kappa and Ge nMOSFETs were processed using standard ion implantation and 550 degrees C RTA. The proposed devices are fully compatible with current VLSI fabrication methods. |
URI: | http://dx.doi.org/10.1109/LED.2009.2035719 http://hdl.handle.net/11536/149867 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2009.2035719 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 31 |
起始页: | 80 |
结束页: | 82 |
显示于类别: | Articles |