標題: High precision, low cost mask for deep x-ray lithography
作者: Shew, BY
Cheng, Y
Shih, WP
Lu, M
Lee, WH
交大名義發表
National Chiao Tung University
公開日期: 1-Feb-1998
摘要: The precision of transferred patterns are highly dependent on the quality of the mask in deep x-ray lithography. Many parameters, such as the critical energy of the synchrotron light, beamline optics and even the microstructure to be exposed should be considered in mask design. In this paper, the design rules and the boundary conditions for deep x-ray mask are discussed in general. The method of making a precision, multilayer mask using UV lithography technique is also described.
URI: http://dx.doi.org/10.1007/s005420050097
http://hdl.handle.net/11536/149993
ISSN: 0946-7076
DOI: 10.1007/s005420050097
期刊: MICROSYSTEM TECHNOLOGIES
Volume: 4
起始頁: 66
結束頁: 69
Appears in Collections:Articles