Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wang, Terry Tai-Jui | en_US |
dc.contributor.author | Chu, Chang-Lung | en_US |
dc.contributor.author | Hsieh, Ing-Jar | en_US |
dc.contributor.author | Tseng, Wen-Shou | en_US |
dc.date.accessioned | 2019-04-02T06:00:15Z | - |
dc.date.available | 2019-04-02T06:00:15Z | - |
dc.date.issued | 2010-10-04 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.3498049 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150069 | - |
dc.description.abstract | This paper presents the formation of iridium nanocrystals (Ir-NCs) embedded in SiO(2) matrix and it can be used for potential applications of nonvolatile memory devices. The NC formation is investigated by varying Ir film thickness; and the thermal agglomeration is also studied by applying various annealing temperatures and process time. The results of systematic characterization including capacitance-voltage, transmission electron microscopy, and x-ray photoelectron spectroscopy show that the high work-function (5.27 eV) metallic-NCs have a highly thermal stability (up to 900 degrees C) and the resulted Al/SiO(2)/Ir-NCs/SiO(2)/Si/Al stack can have a good retention ability and significant hysteresis window of 17.4 V. (C) 2010 American Institute of Physics. [doi:10.1063/1.3498049] | en_US |
dc.language.iso | en_US | en_US |
dc.title | Formation of iridium nanocrystals with highly thermal stability for the applications of nonvolatile memory device with excellent trapping ability | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.3498049 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 97 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 奈米科技中心 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Center for Nanoscience and Technology | en_US |
dc.identifier.wosnumber | WOS:000282765700084 | en_US |
dc.citation.woscount | 16 | en_US |
Appears in Collections: | Articles |