標題: | Formation of iridium nanocrystals with highly thermal stability for the applications of nonvolatile memory device with excellent trapping ability |
作者: | Wang, Terry Tai-Jui Chu, Chang-Lung Hsieh, Ing-Jar Tseng, Wen-Shou 材料科學與工程學系 材料科學與工程學系奈米科技碩博班 Department of Materials Science and Engineering Graduate Program of Nanotechnology , Department of Materials Science and Engineering |
公開日期: | 4-十月-2010 |
摘要: | This paper presents the formation of iridium nanocrystals (Ir-NCs) embedded in SiO(2) matrix and it can be used for potential applications of nonvolatile memory devices. The NC formation is investigated by varying Ir film thickness; and the thermal agglomeration is also studied by applying various annealing temperatures and process time. The results of systematic characterization including capacitance-voltage, transmission electron microscopy, and x-ray photoelectron spectroscopy show that the high work-function (5.27 eV) metallic-NCs have a highly thermal stability (up to 900 degrees C) and the resulted Al/SiO(2)/Ir-NCs/SiO(2)/Si/Al stack can have a good retention ability and significant hysteresis window of 17.4 V. (C) 2010 American Institute of Physics. [doi:10.1063/1.3498049] |
URI: | http://dx.doi.org/10.1063/1.3498049 http://hdl.handle.net/11536/32084 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.3498049 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 97 |
Issue: | 14 |
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顯示於類別: | 期刊論文 |