標題: | Charge storage characteristics of iridium silicide nanocrystals embedded in SiO2 matrix for nonvolatile memory application |
作者: | Wang, Terry Tai-Jui Hung, Shih Wei Chuang, Pi Kai Kuo, Cheng Tzu 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | Onvolatile memory;Nanocrystal;Ir-silicide |
公開日期: | 1-十月-2010 |
摘要: | In this work, the nanostructure-assisted "Al/SiO2/Ir-silicide-NCs/SiO2/P-Si-sub/Al" stack with iridium silicide nanocrystals (Ir-silicide-NCs) embedded between two SiO2 layers has been demonstrated in the application of nonvolatile memory for the first time. A significant memory window voltage of 14.2 Vat sweeps of +/- 10 V by capacitance-voltage measurement can be reached, when well-distributed Ir-silicide-NCs are observed in cross-sectional TEM examination. In this case, the trap density is estimated to be about 1.06 x 10(13) cm(-2), indicating a high trapping efficiency stack for nonvolatile memory application. (C) 2010 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.tsf.2010.04.092 http://hdl.handle.net/11536/150076 |
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2010.04.092 |
期刊: | THIN SOLID FILMS |
Volume: | 518 |
起始頁: | 7287 |
結束頁: | 7290 |
顯示於類別: | 期刊論文 |