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dc.contributor.authorSeidel, J.en_US
dc.contributor.authorMaksymovych, P.en_US
dc.contributor.authorBatra, Y.en_US
dc.contributor.authorKatan, A.en_US
dc.contributor.authorYang, S. -Y.en_US
dc.contributor.authorHe, Q.en_US
dc.contributor.authorBaddorf, A. P.en_US
dc.contributor.authorKalinin, S. V.en_US
dc.contributor.authorYang, C. -H.en_US
dc.contributor.authorYang, J. -C.en_US
dc.contributor.authorChu, Y. -H.en_US
dc.contributor.authorSalje, E. K. H.en_US
dc.contributor.authorWormeester, H.en_US
dc.contributor.authorSalmeron, M.en_US
dc.contributor.authorRamesh, R.en_US
dc.date.accessioned2019-04-03T06:39:45Z-
dc.date.available2019-04-03T06:39:45Z-
dc.date.issued2010-11-05en_US
dc.identifier.issn0031-9007en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevLett.105.197603en_US
dc.identifier.urihttp://hdl.handle.net/11536/150133-
dc.description.abstractThe transport physics of domain wall conductivity in La-doped bismuth ferrite (BiFeO3) has been probed using variable temperature conducting atomic force microscopy and piezoresponse force microscopy in samples with arrays of domain walls in the as-grown state. Nanoscale current measurements are investigated as a function of bias and temperature and are shown to be consistent with distinct electronic properties at the domain walls leading to changes in the observed local conductivity. Our observation is well described within a band picture of the observed electronic conduction. Finally, we demonstrate an additional degree of control of the wall conductivity through chemical doping with oxygen vacancies, thus influencing the local conductive state.en_US
dc.language.isoen_USen_US
dc.titleDomain Wall Conductivity in La-Doped BiFeO3en_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevLett.105.197603en_US
dc.identifier.journalPHYSICAL REVIEW LETTERSen_US
dc.citation.volume105en_US
dc.citation.issue19en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000283849300017en_US
dc.citation.woscount218en_US
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