標題: Light-Output-Power Enhancement of GaN-Based Light-Emitting Diodes on an n-GaN Layer Using a SiO2 Photonic Quasi-Crystal Overgrowth
作者: Huang, H. W.
Huang, J. K.
Lee, K. Y.
Lin, C. F.
Kuo, H. C.
光電工程研究所
Institute of EO Enginerring
關鍵字: Gallium nitride (GaN);light-emitting diodes (LEDs);photonic quasi-crystal (PQC)
公開日期: 1-Jun-2010
摘要: GaN-based LEDs with a SiO2 oxide PQC pattern on an n-GaN layer by nanoimprint lithography are fabricated and investigated. At a driving current of 20 mA on a Transistor-Outline-can package, the light output power of LED III (d = 1.2 mu m) was enhanced by a factor of 1.20. The internal-quantum-efficiency result offers promising potential to enhance the light output power of commercial light-emitting devices with a SiO2 oxide PQC structure on an n-GaN layer.
URI: http://dx.doi.org/10.1109/LED.2010.2045218
http://hdl.handle.net/11536/150151
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2045218
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
起始頁: 573
結束頁: 575
Appears in Collections:Articles