標題: Structural Characteristics of Nanometer Thick Gd2O3 Films Grown on GaN (0001)
作者: Chang, W. H.
Chang, P.
Lai, T. Y.
Lee, Y. J.
Kwo, J.
Hsu, C-H
Hong, M.
光電工程學系
Department of Photonics
公開日期: 1-Dec-2010
摘要: High-quality Gd2O3 epi-films 5-20 nm thick have been grown on GaN (0001) using molecular beam epitaxy A detailed structural investigation was carried out by in situ reflection high energy electron diffraction cross sectional transmission electron microscopy, and X-ray scattering using a synchrotron radiation source The films consist of the high temperature monoclinic (m) phase with six rotational domains which can be easily mistaken for being the hexagonal phase All the domains follow the m-Gd2O3 ((2) over bar 01)< 020 > parallel to GaN (0001) < 11<(2)over bar>0 > orientational relationship
URI: http://dx.doi.org/10.1021/cg100851b
http://hdl.handle.net/11536/150181
ISSN: 1528-7483
DOI: 10.1021/cg100851b
期刊: CRYSTAL GROWTH & DESIGN
Volume: 10
起始頁: 5117
結束頁: 5122
Appears in Collections:Articles