標題: Formation of D- centers in GaAs/AlGaAs quantum wells
作者: Lee, CH
Chang, YH
Lin, HH
Lee, CP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-六月-1998
摘要: Three different experiments were employed to study the behaviors of neutral (D-0) and negatively charged donors (D-) in doped GaAs/AlGaAs multiple quantum wells. The existence of the D- centers in such structures were demonstrated, and its optical properties were investigated. The spectral responses of such systems under different experimental conditions, such as different barrier doping concentration, different temperature, and different exposure to light illumination were studied. A potential fluctuation model was proposed to explain the experimental results.
URI: http://hdl.handle.net/11536/150193
ISSN: 0577-9073
期刊: CHINESE JOURNAL OF PHYSICS
Volume: 36
起始頁: 519
結束頁: 526
顯示於類別:期刊論文