標題: Epitaxial stabilization of a monoclinic phase in Y2O3 films on c-plane GaN
作者: Chang, W. H.
Chang, P.
Lee, W. C.
Lai, T. Y.
Kwo, J.
Hsu, C. -H.
Hong, J. M.
Hong, M.
光電工程學系
Department of Photonics
關鍵字: Monoclinic;Single crystal growth;Molecular beam epitaxy;Y2O3;GaN;High-kappa dielectrics
公開日期: 15-May-2011
摘要: Nanometer-thick Y2O3 films were grown epitaxially on GaN (0 0 0 1) using molecular beam epitaxy (MBE). The structures of the oxide films were studied in situ by reflection high energy electron diffraction (RHEED) during the growth and ex situ by high resolution X-ray diffraction using synchrotron radiation. At atmospheric pressure. Y2O3 exists in either cubic or hexagonal structure. For the first time, the high-pressure monoclinic phase of Y2O3, stabilized by epitaxy, was prepared and preserved under atmospheric pressure. The electrical characterization carried out on the Y2O3/GaN metal-oxide-semiconductor (MOS) capacitors showed a leakage current density of similar to 3.3 x 10(-6) A/cm(2) at 1.5 MV/cm, which remained almost the same after 800 degrees C annealing. A dielectric constant of similar to 20 and a hysteresis of similar to 250 mV were deduced from the capacitance-voltage (C-V) curves for the epitaxial monoclinic Y2O3. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2010.10.006
http://hdl.handle.net/11536/150332
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2010.10.006
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 323
起始頁: 107
結束頁: 110
Appears in Collections:Articles